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| LESHAN RADIO COMPANY, LTD. Silicon Hot -Carrier Diodes These devices are designed primarily for high-efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low-cost,high-volume consumer and industrial/commercial requirements. They are also available in a Surface Mount package. * Extremely Low Minority Carrier Lifetime - 15 ps (Typ) * Very Low Capacitance - 1.0 pF @ V R = 20 V * High Reverse Voltage - to 70 Volts * Low Reverse Leakage - 200 nA (Max) MBD701 MMBD701LT1 70 VOLTS HIGH-VOLTAGE SILICON HOT-CARRIER DETECTOR AND SWITCHING DIODES 3 3 CATHODE 1 ANODE 1 2 CASE 318-08, STYLE8 SOT- 23 (TO-236AB) MAXIMUM RATINGS (T J = 125C unless otherwise noted) MBD701 Rating Reverse Voltage Forward Power Dissipation @ T A = 25C Derate above 25C Operating Junction Temperature Range Storage Temperature Range Symbol VR PF 280 2.8 T J MMBD701LT1 Value 70 200 2.0 Unit Volts mW mW/C C C T stg -55 to +125 -55 to +150 DEVICE MARKING MMBD701LT1 = 5H ELECTRICAL CHARACTERISTICS (T A = 25C unless otherwise noted) Characteristic Reverse Breakdown Voltage (I R Symbol V (BR)R CT I V V R F F Min 70 -- -- -- -- typ -- 0.5 9.0 0.42 0.7 Max -- 1.0 200 0.5 1.0 Unit Volts pF nAdc Vdc Vdc = 10Adc) Total Capacitance (V R = 20 V, f = 1.0 MHz) Figure 1 Reverse Leakage (V R = 35 V) Figure 3 Forward Voltage (I F = 1.0 mAdc) Figure 4 Forward Voltage (I F = 10 mAdc) Figure 4 NOTE: MMBD701LT1 is also available in bulk packaging. Use MMBD701L as the device title to order this device in bulk. G18-1/2 LESHAN RADIO COMPANY, LTD. MBD701 MMBD701LT1 TYPICAL ELECTRICAL CHARACTERISTICS 2.0 f =1.0MHz 1.6 , MINORITY CARRIER LIFETIME (ps) 500 C T , TOTAL CAPACITANCE (pF) 400 KRAKAUER METHOD 300 1.2 0.8 200 0.4 100 0 0 5.0 10 15 20 25 30 35 40 45 50 0 0 10 20 30 40 50 60 70 80 90 100 V R , REVERSE VOLTAGE (VOLTS) I F , FORWARD CURRENT (mA) Figure 1. Total Capacitance 10 100 Figure 2. Minority Carrier Lifetime I R, REVERSE LEAKAGE ( A) T A = 100C 1.0 I F , FORWARD CURRENT (mA) 10 T A =75C 0.1 T A = 85C T A= -40C 1.0 0.01 T A =25C T A = 25C 0.001 0 10 20 30 40 50 0.1 0 0.2 0.4 0.8 1.2 1.6 2.0 V R , REVERSE VOLTAGE (VOLTS) V F , FORWARD VOLTAGE (VOLTS) Figure 3. Reverse Leakage Figure 4. Forward Voltage I F(PEAK) CAPACITIVE CONDUCTION I R(PEAK) FORWARD CONDUCTION STORAGE CONDUCTION SINUSOIDAL GENERATOR BALLAST NETWORK (PADS) PADS DUT SAMPLING OSCILLOSCOPE (50 INPUT) Figure 5. Krakauer Method of Measuring Lifetime G18-2/2 |
Price & Availability of MMBD701LT1
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